类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 输入电压-Nom | 配置 | 通道数量 | 模拟 IC - 其他类型 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 输入电压(Min) | 场效应管类型 | 输出电流-最大值 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 供应电流-最大值(Isup) | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 切换器配置 | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 开关频率-最大值 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 场效应管特性 | 漏源电阻 | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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![]() | DMC2450UV-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | SILICON | 1.03A 700mA | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 450mW | DUAL | FLAT | 260 | 30 | AEC-Q101 | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | SWITCHING | 480m Ω @ 200mA, 5V | 900mV @ 250μA | 37.1pF @ 10V | 0.5nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 1.03A | 0.74A | 0.7Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4805 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | 活跃 | 1 (Unlimited) | 2W | 2W | 2 P-Channel (Dual) | 19m Ω @ 8A, 10V | 2.8V @ 250μA | 2600pF @ 15V | 39nC @ 10V | 30V | 9A | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AUIRFN8459TR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 2 | 25 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | HEXFET® | 活跃 | 1 (Unlimited) | 6 | EAR99 | 4.8mOhm | 超低电阻 | 50W | FLAT | 未说明 | 未说明 | AEC-Q101 | R-PDSO-F6 | 2 | Dual | 增强型MOSFET | DRAIN | 10 ns | 2 N-Channel (Dual) | SWITCHING | 5.9m Ω @ 40A, 10V | 3.9V @ 50μA | 2250pF @ 25V | 60nC @ 10V | 55ns | 40V | 42 ns | 50A | 20V | 40V | 66 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC3016LSD-13 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 8.2A 6.2A | 2 | 60.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.2W | DUAL | 鸥翼 | 260 | 30 | AEC-Q101 | 2 | 增强型MOSFET | 9.7 ns | N and P-Channel | SWITCHING | 16m Ω @ 12A, 10V | 2.3V @ 250μA | 1415pF @ 15V | 25.1nC @ 10V | 17.1ns | N-CHANNEL AND P-CHANNEL | 40.4 ns | 6.2A | 20V | 0.016Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
FDS6900AS | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 6.9A 8.2A | 2 | 23 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | PowerTrench®, SyncFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 27MOhm | 30V | 2W | 鸥翼 | 未说明 | 8.2A | 未说明 | 不合格 | Dual | 增强型MOSFET | 2W | 900mW | 2 N-Channel (Dual) | SWITCHING | 27m Ω @ 6.9A, 10V | 3V @ 250μA | 600pF @ 15V | 15nC @ 10V | 4ns | 3 ns | 8.2A | 1.9V | 20V | 6.9A | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.9 V | 1.5mm | 5mm | 3.99mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
![]() | DMG6301UDW-7 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6.010099mg | 6.6 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 300mW | 260 | 30 | DMG6301 | 2 | Dual | 2.9 ns | 2 N-Channel (Dual) | 4 Ω @ 400mA, 4.5V | 1.5V @ 250μA | 27.9pF @ 10V | 0.36nC @ 4.5V | 1.8ns | 25V | 2.3 ns | 240mA | 8V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2N7002VA | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 32mg | SILICON | 2 | 12.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 250mW | FLAT | Dual | 增强型MOSFET | 250mW | 5.85 ns | 2 N-Channel (Dual) | SWITCHING | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | 50pF @ 25V | 60V | 280mA | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 7 pF | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN26D0UDJ-7 | Diodes Incorporated | 数据表 | 155 In Stock | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | SOT-963 | 6 | SILICON | 2 | 13.4 ns | -55°C~150°C TJ | Cut Tape (CT) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | ESD PROTECTION | 300mW | FLAT | 260 | 40 | DMN26D0UDJ | 6 | 增强型MOSFET | 300mW | 3.8 ns | 2 N-Channel (Dual) | SWITCHING | 3 Ω @ 100mA, 4.5V | 1.05V @ 250μA | 14.1pF @ 15V | 7.9ns | 20V | 15.2 ns | 240mA | 10V | 0.18A | 3Ohm | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 450μm | 1.05mm | 850μm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
FDPC8016S | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 207.7333mg | SILICON | 20A 35A | 2 | 38 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 42W | 无铅 | 未说明 | not_compliant | 未说明 | 2 | Dual | 增强型MOSFET | DRAIN | 13 ns | 2.1W 2.3W | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 3.8m Ω @ 20A, 10V | 2.5V @ 250μA | 2375pF @ 13V | 35nC @ 10V | 4ns | 3 ns | 100A | 12V | 25V | 75A | 73 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 750μm | 5.1mm | 6.1mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
EFC8811R-TF | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 6-SMD, No Lead | 150°C TJ | Tape & Reel (TR) | 2016 | yes | 活跃 | 1 (Unlimited) | 2.5W | 2 N-Channel (Dual) Common Drain | Logic Level Gate, 2.5V Drive | 2.3mOhm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EFC4621R-TR | ON Semiconductor | 数据表 | 10 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | ACTIVE (Last Updated: 6 days ago) | 表面贴装 | 表面贴装 | 4-XFBGA, FCBGA | 4 | 26 μs | 150°C TJ | Tape & Reel (TR) | 2016 | yes | 活跃 | 1 (Unlimited) | EAR99 | 1.6W | 2 | Dual | 340 ns | 2 N-Channel (Dual) | 无卤素 | 29nC @ 4.5V | 600ns | 24V | 28 μs | 9A | 12.5V | 9A | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 2.5V Drive | 18mOhm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5485NLT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | ACTIVE, NOT REC (Last Updated: 3 days ago) | 表面贴装 | 8-PowerTDFN | 8 | 27.8 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | e3 | yes | 不用于新设计 | 1 (Unlimited) | EAR99 | Tin (Sn) | 2.9W | 8 | 2 | Dual | 9.5 ns | 2 N-Channel (Dual) | 44m Ω @ 15A, 10V | 2.5V @ 250μA | 无卤素 | 560pF @ 25V | 20nC @ 10V | 26.6ns | 60V | 23.7 ns | 5.3A | 20V | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN3018SSD-13 | Diodes Incorporated | 数据表 | 100 In Stock | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 2 | 20.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.5W | 鸥翼 | 260 | 40 | AEC-Q101 | 2 | Single | 增强型MOSFET | 4.3 ns | 2 N-Channel (Dual) | SWITCHING | 22m Ω @ 10A, 10V | 2.1V @ 250μA | 697pF @ 15V | 13.2nC @ 10V | 4.4ns | 30V | 4.1 ns | 6.7A | 20V | 30V | 60A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 4.95mm | 3.95mm | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
FDPC8013S | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 192mg | 13A 26A | 2 | 30 ns | -55°C~150°C TJ | Digi-Reel® | 2009 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 2W | Dual | 2W | 6 ns | 800mW 900mW | 2 N-Channel (Dual) | 6.4m Ω @ 13A, 10V | 3V @ 250μA | 827pF @ 15V | 13nC @ 10V | 5ns | 4 ns | 55A | 1.7V | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.7 V | 750μm | 3.4mm | 3.4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87331Q3D | Texas Instruments | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 5 days ago) | 表面贴装 | 表面贴装 | 8-PowerLDFN | 8 | 11.2 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 6W | 260 | 1 | 0.65mm | CSD87331 | 8 | 27V | 开关控制器 | Dual | 6W | 3.8 ns | 12V | 2 N-Channel (Half Bridge) | 45A | 2.1V, 1.2V @ 250μA | 518pF @ 15V | 3.2nC @ 4.5V | 4.7ns | 15mA | 30V | 2.4 ns | PUSH-PULL | 15A | 2.1V | 1.2V | 1500kHz | 30V | Standard | 1.5mm | 3.3mm | 3.3mm | 1.5mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||
FDS6982 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | 6.3A 8.6A | 2 | 36 ns | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 15mOhm | 30V | 2W | 8.6A | Dual | 2W | 900mW | 2 N-Channel (Dual) | 28m Ω @ 6.3A, 10V | 3V @ 250μA | 760pF @ 10V | 12nC @ 5V | 11ns | 18 ns | 8.6A | 2.2V | 20V | 30V | 30V | 逻辑电平门 | 2.2 V | 1.5mm | 5mm | 4mm | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD86360Q5D | Texas Instruments | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 2 days ago) | Gold | 表面贴装 | 表面贴装 | 8-PowerLDFN | 8 | 29.3 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 13W | DUAL | 无铅 | 260 | 1 | not_compliant | 未说明 | CSD86360 | 12V | 2 | 开关稳压器 | 9.5 ns | 2 N-Channel (Half Bridge) | 2.1V @ 250μA | 2060pF @ 12.5 | 12.6nC @ 4.5V | 14.8ns | 50mA | 25V | 6.6 ns | BUCK | 50A | 10V | 1500kHz | 25V | 逻辑电平门 | 3.7mOhm | 1.5mm | 5mm | 6mm | 1.5mm | 无SVHC | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||
AO6601 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | SC-74, SOT-457 | 6 | 3.4A 2.3A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 1.15W | 增强型MOSFET | 1.15W | N and P-Channel Complementary | 60m Ω @ 3.4A, 10V | 1.5V @ 250μA | 285pF @ 15V | 12nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 2.3A | 12V | 3.4A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMC8200S | ON Semiconductor | 数据表 | 26730 In Stock | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 186mg | SILICON | 6A 8.5A | 35 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 20MOhm | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1W | 增强型MOSFET | 2.5W | 排水源头 | 700mW 1W | 2 N-Channel (Dual) | SWITCHING | 20m Ω @ 6A, 10V | 3V @ 250μA | 660pF @ 15V | 10nC @ 10V | 18A | 20V | 6A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 2.3 V | 30 pF | 750μm | 3mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | TC8020K6-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | Tin | 表面贴装 | 表面贴装 | 56-VFQFN Exposed Pad | 56 | 191.387631mg | SILICON | 6 | 20 ns | -55°C~150°C TJ | Tray | 2012 | e4 | 活跃 | 3 (168 Hours) | 56 | EAR99 | 镍钯金 | QUAD | 260 | 40 | COMPLEX | 12 | 增强型MOSFET | 10 ns | 6 N and 6 P-Channel | SWITCHING | 8 Ω @ 1A, 10V | 2.4V @ 1mA | 50pF @ 25V | 15ns | 200V | N-CHANNEL AND P-CHANNEL | 15 ns | 8Ohm | -200V | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSL806NH6327XTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2.3A Ta | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | OptiMOS™ | e3 | Discontinued | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 雪崩 额定 | 鸥翼 | 未说明 | 未说明 | AEC-Q101 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 500mW | 2 N-Channel (Dual) | 57m Ω @ 2.3A, 2.5V | 750mV @ 11μA | 无卤素 | 259pF @ 10V | 1.7nC @ 2.5V | 20V | 2.3A | 0.057Ohm | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 1.8V Drive | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5C470NLWFT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 48 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 8-PowerTDFN | YES | SILICON | 11A Ta 36A Tc | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | FLAT | 260 | not_compliant | 30 | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 3W Ta 24W Tc | 2 N-Channel (Dual) | 11.5m Ω @ 5A, 10V | 2.2V @ 20μA | 590pF @ 25V | 4nC @ 4.5V | 40V | 0.0178Ohm | 110A | 40V | 49 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AUIRF7309QTR | Infineon Technologies | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4A 3A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.4W | 鸥翼 | Dual | 增强型MOSFET | 1.4W | N and P-Channel | SWITCHING | 50m Ω @ 2.4A, 10V | 3V @ 250μA | 520pF @ 15V | 25nC @ 4.5V | N-CHANNEL AND P-CHANNEL | 3A | 20V | 4A | 0.05Ohm | 30V | 16A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMN6A11DN8TA | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 2.5A | 2 | 8.2 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 120mOhm | Matte Tin (Sn) | 60V | 2.1W | 鸥翼 | 260 | 2.7A | 40 | 8 | 2 | 增强型MOSFET | 2.1W | 1.95 ns | 1.8W | 2 N-Channel (Dual) | SWITCHING | 120m Ω @ 2.5A, 10V | 1V @ 250μA (Min) | 330pF @ 40V | 5.7nC @ 10V | 3.5ns | 4.6 ns | 3.2A | 1V | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
FDMB2307NZ | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 4 days ago) | Gold | 表面贴装 | 表面贴装 | 6-WDFN Exposed Pad | 6 | 12.0024mg | SILICON | 2 | 32 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 800mW | FDMB2307 | 增强型MOSFET | 2.2W | 12 ns | 2 N-Channel (Dual) Common Drain | SWITCHING | 28nC @ 5V | 34ns | 20V | 17 ns | 8A | 1V | 12V | 9.7A | 1.76nF | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 750μm | 2mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
